FII30-12E

FII30-12E

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See Product Specifications

FII30-12E
Mfr.:
Description:
IGBT H BRIDGE 1200V 33A I4PAK5
Package:
Tube
Datasheet:
FII30-12E Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:FII30-12E
Category:Discrete Semiconductor Products
Subcategory:Transistors - IGBTs - Arrays
Manufacturer:IXYS
Packaging:Tube
Product Status:Obsolete
IGBT Type:NPT
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):33 A
Power - Max:150 W
Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 20A
Current - Collector Cutoff (Max):200 µA
Input Capacitance (Cies) @ Vce:1.2 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:i4-Pac™-5
Supplier Device Package:ISOPLUS i4-PAC™
In Stock: 0
Stock:
0 Can Ship Immediately
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